UT Graduate Cousework

•   EE382M (Topic 1) - VLSI Testing
•   EE382M (Topic 7) - VLSI I
•   EE382M (Topic 8) - VLSI II
•   EE383P (Topic 6) - Optoelectronic Devices
•   EE390C - Statistical Methods in Engineering and Quality Assurance
•   EE396K (Topic 26) - Microelectromechanical Systems
•   EE396K (Topic 8) - VLSI Fabrication Techniques
•   EE396K (Topic 25) - Organic/Polymer Semiconductor Devices
•   EE396K (Topic 21) - Submicron Device Physics and Technologies

   UT Undergraduate Cousework

•   EE339 - Solid-State Electronic Devices
•   EE379K - Solar Conversion Devices
•   EE438 - Electronic Circuits I

  EE339 - Solid-State Electronic Devices

• Intro / Semiconductors - crystal growth

• Quantum Concepts

• Energy bands in solids; Effective mass approximation; Electrons and holes carrier concentrations

• Drift currents; Mobility / Hall effect

• Carrier lifetime and photoconductivity

• Diffusions: P-N junctions

• Metal-semiconductor contacts; Field-effect transistors

• FET's; MIS and MOS versions

• Bipolar junction transistors (BJT's)

• Optoelectronic Devices (LED's, lasers, etc...)

  EE379K - Solar Conversion Devices

• Principles of photovoltaics

• Electrons and holes in semiconductors

• Generation and recombination

• Junctions; Analysis of p-n junctions

• Monocrystalline solar cells

• Silicon solar cell design and optimization

• Thin film solar cells

• Managing light; Strategies for higher efficiency

• Solar cells based on organics and nanocrystals

• Non-photovoltaic approaches to solar energy conversion

  EE438 - Electronic Circuits I

• Amplifiers, Circuit models for amplifiers, Frequency response of amplifiers

• Physical operation of diodes, The ideal diode, Forward bias characteristics, Reverse bias operation (Zener diodes), Rectifiers circuits, Limiting and clamping circuits

• MOSFETs: Device structure and physical operation, Current-voltage characteristics, MOSFET circuits at DC, Biasing in MOS amplifier circuits, Small signal operation and models, Single stage amplifiers, Internal capacitances and high-frequency model, Frequency response of the CS amplifier

• BJTs:  Device structure and physical operation, Current-voltage characteristics, BJT circuits at DC, Biasing in BJT amplifier circuits, Small signal operation and models, Single stage amplifiers, Internal capacitances and high-frequency model, Frequency response of the common emitter amplifier

• Single-Stage Integrated Circuit Amplifiers: Current sources, Current mirrors, Current steering circuits, High frequency response, CS and CE amplifiers, CG and CB amplifiers, Cascode amplifiers, Source and emitter followers

• Differential and Multistage Amplifiers: The MOS differential pair, Small-signal operation of MOS differential pair, BJT differential pair, Differential amplifier with active load, Frequency response of differential amplifier, Multistage CMOS op amp and bipolar op amp

Lab Section: covers generation and acquisition of test signals; current, voltage, and impedance measurements; transfer function measurement; and spectrum measurements and analysis.

  EE382M (Topic 1) - VLSI Testing

• Fault modeling

• Boolean testing

• Fault simulation

• Test pattern generation

• Sequential circuit testing

• Design for testability

• Built in Self Test (BIST)

• Test compression

• Memory test

• Delay test

• Logic Diagnosis

• Mixed-signal testing and other test methods

  EE382M (Topic 7) - VLSI I

• CMOS transistors, CMOS fabrication and layout, CMOS logic

• MOS transistor theory

• DC and transient gate characteristics

• Logical effort

• Combinational circuits

• Design of adders

• Datapath

• Interconnects in CMOS technology

• Sequential elements, Design styles

• Hardware description languages, Synthesis

• Memories

• Dynamic CMOS logic

• Deep submicron issues

• CAMs, ROMs, PLAs

• Circuit pitfalls

• Introduction to test

• Packaging and I/O

• Circuit optimization, Design for low power, Skew-tolerant design

• Scaling and economics, evolution of microprocessor

  EE382M (Topic 8) - VLSI II

• Transistor and process technology

• Early design planning (EDP): Front End and Back End

• Flip-flop design

• Timing analysis for EDP

• Global clocking

• Array design for EDP

• Power delivery and management

• DSM interconnect

• Variable aware circuit design

• Static and statistical timing analysis

• Dynamic circuits

• Array circuit design

• Noise

• I/O, ESD

• Deep pipelined design

• DFT, DFD, DFX

• Arch design for low power, circuit design for low power

• Asynchronous design

  EE383P (Topic 6) - Optoelectronic Devices

• Review of basic physics: crystals, quantum, band structure, density of states, statistical mechanics

• Heterostructures: band alignments, band diagrams, etc...

• Strain: critical thickness, band structure changes (energy shifts, symmetries, etc...)

• Crystal Growth: liquid phase epitaxy, molecular beam epitaxy, metalorganic chemical vapor deposition

• Optical Processes: Fermi's Golden Rule, Einstein's A & B coefficients, absorption (3-D, 2-D, 1-D, 0-D), emission/gain, strain effects, refraction, parasitic losses

• Semiconductor Diodes: Diodes (hetero- and homojunction), tunneling, meta/semiconductor interfaces

• Light Emitting Diodes

• Photodetectors: Photoconductors, avalanche photodiodes, MSM photodiodes, intersubband

• Photovoltaics

• Modulators: Electro-absorption and electro-optic, device geometries

• Semiconductor Lasers: cavities and resonators, Rogrod analysis, rate equations, laser structures: edge-emitting, vertical-cavity, distributed feedback, quantum cascade, optical amplifiers

• Terahertz Generation/Detection: Photomixers, Austin switches, Schottky detectors

  EE390C - Statistical Methods in Engineering and Quality Assurance

• Probability properties and applications

• Descriptive statistics and the Normal distribution

• Proportion estimation and confidence intervals

• Hypothesis testing

• Chi-Squared distribution and variance tests

• F distribution and variance tests

• Individuals and MR charts, XBAR and S charts

• XBAR and R charts, attribute charts

• Pairwise t-tests, 1-way ANOVAs, 2-way ANOVAs

• Multiple comparisons and response surface designs

• Gauge studies and other applications

• Experimental designs

  EE396K (Topic 26) - Microelectromechanical Systems

• Intro to MEMS: actuators and sensor examples

• Material properties: thermal; mechanical properties

• Cantilever beams

• Dynamic mechanical response

• Force mechanisms: electrostatic, thermal

• Basic materials: Silicon, impurities, defects

• Thin film growth and deposition; Lithography; Etching

• Bulk and RIE anisotropic etching; Deep RIE, CMP, plating, bonding, etc...

• Strain and pressure sensors

• Fabry-Perot pressure sensor

• Design of F-P sensor for yield

• Accelerometers

• Bolometers for electromagnetic detection

• Thermal losses in bolometers, fabrication, and performance

• Chemical sensors: gas, vapor, and liquid phases

  EE396K (Topic 8) - VLSI Fabrication Techniques

• CMOS process overview, Orientation effects, Impurities

• Crystal growth, Impurities in CZ, Gettering, Oxigen in Si

• Basic oxidation process, Oxidation kinetics, Doping effects

• Mobile charge, Thin oxides

• Diffusion, Fick's laws, Vacancy-Impurity interactions

• Diffusion profiles, Boron and phosphorus diffusion

• Ion implantation, Channeling, Implant damage, Annealing

• Evaluation techniques of doped layers

• Irvin curves, Hall effect,  Secondary ion mass spectroscopy (SIMS), C-V

• Deposited thin films, Kinetic gas theory, Step coverage

• Physical vapor deposition, Thermal evaporation, Sputtering, Chemical vapor deposition

• Poly, Oxide, Nitride

• Epitaxy, Autodoping, Pattern shift, Metallization

• Electromigration, Contacts, Chemical mechanical polishing (CMP)

• Lithography, Optical transfer, Masks, Masks aligners, Resists

• Advanced lithography, Etching bias and selectivity

• Plasma etching, Plasma processing

  EE396K (Topic 25) - Organic/Polymer Semiconductor Devices

• Chemical structures, nomenclatures, crystal structures, electronic structure

• Charge carriers and transport in crystalline organic semiconductors

• Charge carriers in conjugated polymers, conducting polymers, solitons, polarons

• Semiconducting polymers, charge carriers and transport in polycrystalline organic semiconductors

• Charge transport in disordered materials

• Optical properties of conjugated organics and polymers

• Organic solar cells, polymer solar cells

• Device physics and operation of bulk heterojunction cells

• Organic light emitting diodes (OLEDS), white OLEDS and lighting

• Color OLEDS and organic displays

• Organic field effect transistors (OFET's), organic FET circuits

  EE396K (Topic 21) - Submicron Device Physics and Technologies

• MOS Capacitors: Depletion approximation; General analysis

• Applications of C-V and C-t plots

• Interface traps and characterization techniques

• Gate oxide and high-K dielectrics

• MOSFET analysis: Simple model, general long-channel model

• Subthreshold characteristics

• Mobility model, velocity saturation; Temperature effects

• Shorts channel effects: Drain-induced barrier lowering, punchthrough, ΔVt and ΔS, Vdsat model, short-channel MOS drain current model

• Ion implanted devices/buried-channel devices

• Hot electron effects

• Lightly-doped drain MOSFET electric field model

• Asymmetry effects (S/D non-overlap)

• CMOS latchup; Gate-induced drain leakage current

• Silicon-on-insulator (SOI) and 3-D devices

• Poly-depletion and quantum mechanical effects

• Bipolar transistors: Minority carrier concentration profile, current models, emitter injection efficiency/base transport factor

• Current gain; Low-level injection effect; High-level injection effect; Early effect

• Base storage time/base transit time

• Kirk effect; Avalanche breakdown; punchthrough